CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854E3
Issued Date :...
CYStech Electronics Corp.
Silicon
PNP Epitaxial Planar
Transistor
www.DataSheet4U.com Spec. No. : C854E3
Issued Date : 2004.07.28
Revised Date : Page No. : 1/4
BTB1236AE3
Description
High BVCEO High current capability
Symbol
BTB1236AE3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -180 -160 -5 -1.5 -3 2 20 150 -55~+150 Unit V V V A A W W °C °C
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V µA µA V V MHz pF
www.DataSheet4U.com Spec. No. : C854E3
Issued Date : 2004.07.28
Revised Date : Page No. : 2/4
Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank Range K 60~120 P 82~190 Q 120~200
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
www.DataSheet4U.com Spec. ...
