BTB1236AT3

CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 1/4 BTB1236AT3 Description High BVCEO High current capability Pb-free package Symbol BTB1236AT3 Outline TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits -180 -160 -5 -1.5 -3 0.5 1 20 150 -55~+150 Unit V V V A A A W °C °C BTB1236AT3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 160 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 320 Unit V V V µA µA V V MHz pF www.DataSheet4U.com Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTB1236AT3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V www.DataSheet4U.com Spec. No. : C8...