CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208N3 www.DataSheet4U.com Issued...
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4
BTC3906N3
Description
The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.
Features
High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTA1514N3
Symbol
BTC3906N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case
Symbol VCBO VCEO VEBO IC PD PD
RθJA RθJC Tj Tstg
Junction Temperature Storage Temperature
Note : Free air condition.
Limits 180 160 6 600 225 (Note) 560 556 (Note) 223 150 -55~+150
Unit V V V mA mW mW °C/W °C/W °C °C
BTC3906N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 25 60 40 52 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF
Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 2/4
Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, ...
