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BTC4083S3

Cystech Electonics Corp

NPN Transistor

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTC4083S3 Spec. No. : C205S3 Issued Date : 2003.12.30 Revised...


Cystech Electonics Corp

BTC4083S3

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Description
CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTC4083S3 Spec. No. : C205S3 Issued Date : 2003.12.30 Revised Date : 2005.11.18 Page No. : 1/4 Description The BTC4083S3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. ( fT = 3.2GHz, typ. @ VCE=10V, IC=10mA, f=500MHz ) Very low capacitance. ( Cob = 0.8pF , typ. @ VCB=10V, f=1MHz ) Small Rbb’-CC and high gain. ( Rbb’-Cc = 4ps , typ. @VCB=10V, IC=10mA, f=31.8MHz) Small NF. ( NF = 3.5dB , typ. @VCE=12V, IC=2mA, f=200MHz, Rg=50Ω ) Symbol BTC4083S3 Outline SOT-323 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg BTC4083S3 Limits 20 11 3 50 200 150 -55~+150 Unit V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C205S3 Issued Date : 2003.12.30 Revised Date : 2005.11.18 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Rbb’-CC NF Min. Typ. 20 11 3---82 1.4 3.2 - 0.8 -4 - 3.5 Max. 0.5 0.5 0.5 180 1.5 12 - Unit V V V µA µA V GHz pF ps dB Test Conditions IC=10µA IC=1mA IE=10µA VCB=10V VEB=2V IC=10mA, IB=5mA VCE=10V, IC=5mA VCE=10V, IC=10mA, f=500MHz VCB=10V, IE=0A, f=1MHz VCB=10V, IC=10mA, f=31.8MHz VCE=12V, IC=2mA, f=200MHz, Rg=50Ω *Pulse Te...




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