Document
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC4617C3
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 1/7
Description
The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BTA1774C3. Pb-free lead plating and halogen-free package.
Symbol
BTC4617C3
Outline
SOT-523 C
B:Base C:Collector E:Emitter
BE
Ordering Information
Device
Package
Shipping
BTC4617C3-X-T1-G
SOT-523 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @TA=25℃ Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC PD RθJA Tj Tstg
Limits
60 50 7 150 150 833.3 -55~+150 -55~+150
Unit
V V V mA mW C/W C C
Characteristics (Ta=25C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) hFE fT Cob
Min.
60 50 7 270 -
Typ.
180 2
Max.
100 100 0.5 560 3.5
Unit
V V V nA nA V MHz pF
Test Conditions IC=50μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=30MHz VCB=12V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Marking Code and Classification of hFE
Rank hFE Range Marking
S 270-560
BS
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
0.14 1mA
0.12
Collector Current---IC(A)
0.1 500uA 400uA
0.08 300uA
0.06 200uA
0.04 IB=100uA
0.02
0 012345 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
0.25 0.2
0.15 0.1
0.05 0 0
Emitter Grounded Output Characteristics
5mA
2.5mA 1.5mA
IB=0.5mA
12 345 Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
150°C
VCE=6V
Saturation Voltage vs Collector Current 1000
VCESAT@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
100 -55°C
25°C
150°C 100
10 1
10 100 Collector Current---IC(mA)
1000
10 1
-55℃
25°C
10 100 Collector Current---IC(mA)
1000
1000
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current 1000
Cutoff Frequency---FT(MHZ)
Saturation Voltage---(mV)
150℃
25°C -55°C
100
FT@VCE=12V
100 1
VBESAT@IC=10IB
10 100 Collector Current---IC(mA)
1000
10 0.1
1 10 Collector Current --- IC(mA)
100
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 4/7
Typical Characteristics(Cont.)
Collector Current---IC(mA)
On Voltage vs Collector Current 1000
VCE=6V
100
150°C 10
-55°C
25°C 1
Capacitance---(pF)
Capacitance vs Reverse-biased Voltage 100
f=1MHz
Cib 10
Cob
0.1
100 200 300 400 500 600 700 800 900 1000 Base to Emitter Voltage---VBE(mV)
1
0.1 1 10 Reverse-biased Voltage---VR(V)
100
Power Dissipation---PD(mW)
160 140 120 100 80 60 40 20
0 0
Power Derating Curve
50 100 150 Ambient Temperature ---Ta(℃ )
200
BTC4617C3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 5/7
Carrier Tape Dimension
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3C/second max.
3C/second max.
Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100C 150C 60-120 seconds
150C 200C 60-180 seconds
Time maintained above: −Temperature (TL) − Time (tL)
183C 60-150 seconds
217C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC4617C3
CYStek Product Specification
CYStech Electronics Corp.
SOT-523 Dimension
Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 7/.