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BTC4617C3 Dataheets PDF



Part Number BTC4617C3
Manufacturers Cystech Electonics Corp
Logo Cystech Electonics Corp
Description NPN Transistor
Datasheet BTC4617C3 DatasheetBTC4617C3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4617C3 Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 1/7 Description  The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching.  Complementary to BTA1774C3.  Pb-free lead plating and halogen-free package. Symbol BTC4617C3 Outline SOT-523 C B:Base C:Collector E:Emitter BE Ordering Information Device Package Shipping BTC4617C3-X-T1-G SOT-52.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4617C3 Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 1/7 Description  The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching.  Complementary to BTA1774C3.  Pb-free lead plating and halogen-free package. Symbol BTC4617C3 Outline SOT-523 C B:Base C:Collector E:Emitter BE Ordering Information Device Package Shipping BTC4617C3-X-T1-G SOT-523 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTC4617C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @TA=25℃ Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 60 50 7 150 150 833.3 -55~+150 -55~+150 Unit V V V mA mW C/W C C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. 60 50 7 270 - Typ. 180 2 Max. 100 100 0.5 560 3.5 Unit V V V nA nA V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=30MHz VCB=12V, IE=0A, f=1MHz *Pulse Test: Pulse Width 380μs, Duty Cycle2% Marking Code and Classification of hFE Rank hFE Range Marking S 270-560 BS BTC4617C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics 0.14 1mA 0.12 Collector Current---IC(A) 0.1 500uA 400uA 0.08 300uA 0.06 200uA 0.04 IB=100uA 0.02 0 012345 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 0.25 0.2 0.15 0.1 0.05 0 0 Emitter Grounded Output Characteristics 5mA 2.5mA 1.5mA IB=0.5mA 12 345 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 1000 150°C VCE=6V Saturation Voltage vs Collector Current 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE 100 -55°C 25°C 150°C 100 10 1 10 100 Collector Current---IC(mA) 1000 10 1 -55℃ 25°C 10 100 Collector Current---IC(mA) 1000 1000 Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 150℃ 25°C -55°C 100 FT@VCE=12V 100 1 VBESAT@IC=10IB 10 100 Collector Current---IC(mA) 1000 10 0.1 1 10 Collector Current --- IC(mA) 100 BTC4617C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 4/7 Typical Characteristics(Cont.) Collector Current---IC(mA) On Voltage vs Collector Current 1000 VCE=6V 100 150°C 10 -55°C 25°C 1 Capacitance---(pF) Capacitance vs Reverse-biased Voltage 100 f=1MHz Cib 10 Cob 0.1 100 200 300 400 500 600 700 800 900 1000 Base to Emitter Voltage---VBE(mV) 1 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Dissipation---PD(mW) 160 140 120 100 80 60 40 20 0 0 Power Derating Curve 50 100 150 Ambient Temperature ---Ta(℃ ) 200 BTC4617C3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 5/7 Carrier Tape Dimension BTC4617C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC4617C3 CYStek Product Specification CYStech Electronics Corp. SOT-523 Dimension Spec. No. : C204C3 Issued Date : 2004.03.02 Revised Date : 2019.08.26 Page No. : 7/.


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