BTC5177N3

CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor Spec. No. : C213N3 www.DataSheet4U.com Issued Date : 2003.05.13 Revised Date : Page No. : 1/3 BTC5177N3 Description The BTC5177N3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline BTC5177N3 SOT-23 B：Base C：Collector E：Emitter Features Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz Mini-mold package Applications Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25℃) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 3 5 2 10 150 150 -65~+150 Unit V V V mA mW °C °C BTC5177N3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (TA=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Noise Figure Insertion Gain |S21e|2 in 50Ω system Output Capacitance Conditions VCB =3V, IE=0 VEB =1V VCE =2V, IC =7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, IC =3mA, f =2GHz VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCB =2V, IE=0, f = 1MHz Symbol ICBO IEBO hFE fT NF |S21e| ...