BTC5201I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor www.DataSheet4U.com Issued Date : 2003.11.25 Revised Date : Page No. : 1/4 Spec. No. : C653I3 BTC5201I3 Low VCE(sat) High BVCEO Excellent current gain characteristics Features Symbol BTC5201I3 Outline TO-251 B：Base C：Collector E：Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTC5201I3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 fT Cob Min. 80 60 40 Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.2 1.5 Unit V µA µA V V V V MHz pF www.DataSheet4U.com Issued Date : 2003.11.25 Revised Date : Page No. : 2/4 Spec. No. : C653I3 Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=0.2A IC=8A, IB=0.4A IC=2A, IB=0.2A IC=8A, IB=0.8A VCE=1V, IC=0.1A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTC5201I3 CYSte...