CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
www.DataSheet4U.com Issued Date : 2003.11.25
Revis...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
www.DataSheet4U.com Issued Date : 2003.11.25
Revised Date : Page No. : 1/4
Spec. No. : C653I3
BTC5201I3
Low VCE(sat) High BVCEO Excellent current gain characteristics
Features
Symbol
BTC5201I3
Outline
TO-251
B:Base C:Collector E:Emitter
B CE B C
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTC5201I3 CYStek Product Specification
Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg
Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150
Unit V V V A A W °C/W °C/W °C °C
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 fT Cob Min. 80 60 40 Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.2 1.5 Unit V µA µA V V V V MHz pF
www.DataSheet4U.com Issued Date : 2003.11.25
Revised Date : Page No. : 2/4
Spec. No. : C653I3
Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=0.2A IC=8A, IB=0.4A IC=2A, IB=0.2A IC=8A, IB=0.8A VCE=1V, IC=0.1A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC5201I3
CYSte...