CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTC5706I3
Spec. No. : C819I3 Issued Date : 2004.12...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTC5706I3
Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No. : 1/7
Features
Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package
Applications
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Symbol
BTC5706I3
Outline
TO-251AB
TO-251AA
B:Base C:Collector E:Emitter
B CE
BCE
BTC5706I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Symbol
VCBO VCES VCEO VEBO
IC ICP IB PD
PD
RθJA RθJC Tj Tstg
Limits
80 80 60 6 5 7.5 (Note 1) 1.2 0.8
15
156 8.33 150 -55~+150
Unit V V V V
A
A
W
°C/W °C/W
°C °C
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol
BVCBO BVCES *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE
fT Cob ton tstg
tf
Min.
80 80 60 6 200 -
Typ.
110 200 0.89 400 15 35 300 20
Max.
1 1 135 240 1.2 560 -
Unit
V V V V μA μA mV mV V MHz pF ns ns ns
...