BTD1816I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816I3 BVCEO IC Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2017.05.12 Page No. : 1/6 100V 4A Features Low collector-to-emitter saturation voltage High-speed switching Large current capability Good linearity of hFE High fT RoHS compliant package Applications Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol BTD1816I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Ordering Information Device BTD1816I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name BTD1816I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2017.05.12 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25°C Power Dissipation @ TC=25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 120 100 6 4 8 (Note 1) 1.2 ...