BTD882J3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2017.11.10 Page No. : 1/7 50V 3A Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free lead plating and halogen-free package Symbol BTD882J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD882J3-X-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD882J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2017.11.10 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350us,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 50 50 5 3 7 1 10 150 -55~+150 *1 Unit V V V A A W °C °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max Symbol RθJA RθJC Limit 125 12.5 Unit °C/W Characteristics (Ta=25°C) Symbo...