BTD882SA3

CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 BVCEO IC RCESAT (Typ) 50V 3A 125mΩ Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and halogen-free package Symbol BTD882SA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg BTD882SA3 ECB Limit 60 50 5 3 7 (Note) 750 150 -55~+150 Unit V V V A A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 - - 150 180 - Typ. 0.25 125 90 13 Max. 1 1 0.5 250 2 560 - Unit V V V μA μA V mΩ V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range P 180~390 E 270~560 Orderin...