BTD882T3

CYStech Electronics Corp. BTD882T3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2017.10.19 Page No. : 1/6 50V 3A Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free lead plating package Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD882T3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD882T3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2017.10.19 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 50 50 5 3 7 1 10 150 -55~+150 *1 Unit V V V A A W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 12.5 125 Unit °C/W °C/W Characte...