CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848T3-H www.DataSheet4U.com Issued Da...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4
BTD882T3/S
Features
Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3/S Pb-free package is available
Symbol
BTD882T3
Outline
TO-126
B:Base C:Collector E:Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦350µs,Duty≦2%.
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg
Limit 40 30 5 3 7 1 10 150 -55~+150
Unit V V V A A W °C °C
*1
BTD882T3/S
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V µA µA V V MHz pF
Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4
Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank Range Q 100~200 P 160~320 E 250~500
Ordering Information
Device BTB882T3 BTB882...