BTP6520N3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C321N3 www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 BTP6520N3 Features High Breakdown Voltage:BVCEO≥-350V Complementary to BTN6517N3 Symbol BTP6520N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 225 150 -55~+150 Unit V V V mA mW °C °C BTP6520N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. -350 -350 -5 20 30 30 20 15 40 Typ. Max. -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF Spec. No. : C321N3 www.DataSheet4U.com Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 Test Conditions IC=-100μA IC=-1mA IE=-10μA VCB=-250V VEB=-4V IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA VCE=-10V, IC=-100mA VCE=-10V, IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-30mA VCE=-10V,IC=-50mA VCE=-10V,IC=-100mA VCE=-20V, IC=-10mA, f=20MHz VCB=-20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤3...