CYStech Electronics Corp.
www.DataSheet4U.com Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1...
CYStech Electronics Corp.
www.DataSheet4U.com Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5
PNP Epitaxial Planar High Current (High Performance)
Transistor
BTP955J3
Features
4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Ptot=3Watts Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A Pb-free package
Symbol
BTP955J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current @TA=25°C @TC=25°C Operating and Storage Temperature Range Power Dissipation
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size.
BTP955J3 preliminary CYStek Product Specification
Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg
Limits -120 -100 -6 -4 -10 (Note 1) -1 (Note 2) 1.75 20 -55 ~ +150
Unit V V V A A A W W °C
CYStech Electronics Corp.
Characteristics (Ta=25°C, unless otherwise specified)
Symbol BVCBO BVCER *BVCEO BVEBO ICBO ICER IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) hFE1 hFE2 *hFE3 *hFE4 fT Cob ton toff Min. -120 -100 -100 -6 100 100 75 Typ. -40 -70 -110 -270 -930 -830 200 200 140 10 110 40 68 1030 Max. -50 -50 -10 -60 -120 -150 -370 -1110 -950 300 Unit V V V V nA nA nA mV mV mV mV mV mV MHz pF ns ns
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