Document
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTPA94A3
Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 1/6
Description
High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typically VCE(sat) = -90mV at Ic/IB =-20mA/-2mA. Wide SOA (safe operation area). Complementary to BTNA44A3. Pb-free lead plating and halogen-free package
Symbol
BTPA94A3
Outline
TO-92
B:Base C:Collector E:Emitter
EBC
Ordering Information
Device BTPA94A3-X-TB-G BTPA94A3-X-BK-G
Package
TO-92 (Pb-free lead plating package)
TO-92 (Pb-free lead plating package)
Shipping
2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTPA94A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 2/6
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC IB PD RθJA Tj Tstg
Limits
-400 -400
-6 -500 -300 625 200 150 -55~+150
Unit
V V V mA mA mW C/W C C
Characteristics (Ta=25C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob
Min.
-400 -400 -6
80 100 50 40 -
Typ.
-90 -120 -
Max.
-100 -100 -100 -200 -200 -500 -750 270 6
Unit Test Conditions V IC=-100μA V IC=-1mA V IE=-10μA nA VCB=-400V nA VEB=-6V nA VCE=-400V mV IC=-1mA, IB=-0.1mA mV IC=-20mA, IB=-2mA mV IC=-50mA, IB=-5mA mV IC=-10mA, IB=-1mA - VCE=-10V, IC=-1mA - VCE=-10V, IC=-10mA - VCE=-10V, IC=-50mA - VCE=-10V, IC=-100mA pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE2
Rank Range
P 100~180
Q 120~270
BTPA94A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current 1000
10000
Saturation Voltage vs Collector Current
Saturation Voltage-(mV)
Current Gain---HFE
VCE=10V 100
1000
VCESAT
IC=30IB
Saturation Voltage-(mV)
10 1
10000
VCE=5V
10 100 Collector Current ---IC(mA)
1000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB 1000
100 1
100
10 100 Collector Current--- IC(mA)
1000
Transition Frequency vs Collector Current
Power Dissipation---PD(mW)
100
10 1
700 600 500 400 300 200 100
0 0
1000
IC=10IB
IC=20IB
10 Collector Current ---IC(mA)
Power Derating Curve
100
50 100 150 Ambient Temperature---TA(℃)
Capacitance Characteristics
200
VCE=10V
f=1MHz 100 Cib
Capacitance-(pF)
Transiition Frequency---fT(MHz)
10 Cob
10 1
BTPA94A3
10 Collector Current--- IC(mA)
100
1 0.1
1 10 Reverse-bised Voltage---(V)
100
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Taping Outline
Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 4/6
H2 H2
H2AH2A
D2 A
H3
L L1
F1F2 T2 P1 TP T1
H4 H H1 W1
W D1 D
P2
DIM
A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 -
Item
Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch
BTPA94A3
Millimeters
Min. Max.
4.33 4.83
3.80 4.20
0.36 0.53
4.33 4.83
2.40 2.90
- 0.3
15.50
16.50
8.50 9.50
-1
-1
- 27
- 21
- 11
2.50 -
12.50
12.90
5.95 6.75
50.30
51.30
- 0.55
- 1.42
0.36 0.68
17.50
19.00
5.00 7.00
253 255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3C/second max.
3C/second max.
Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100C 150C 60-120 seconds
150C 200C 60-180 seconds
Time maintained above: −Temperature (TL) − Time (tL)
183C 60-150 seconds
217C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak t.