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BTPA94A3 Dataheets PDF



Part Number BTPA94A3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description PNP Transistor
Datasheet BTPA94A3 DatasheetBTPA94A3 Datasheet (PDF)

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 1/6 Description  High breakdown voltage. (BVCEO=-400V)  Low saturation voltage, typically VCE(sat) = -90mV at Ic/IB =-20mA/-2mA.  Wide SOA (safe operation area).  Complementary to BTNA44A3.  Pb-free lead plating and halogen-free package Symbol BTPA94A3 Outline TO-92 B:Base C:Collector E:Emitter EBC Ordering Information Device.

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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 1/6 Description  High breakdown voltage. (BVCEO=-400V)  Low saturation voltage, typically VCE(sat) = -90mV at Ic/IB =-20mA/-2mA.  Wide SOA (safe operation area).  Complementary to BTNA44A3.  Pb-free lead plating and halogen-free package Symbol BTPA94A3 Outline TO-92 B:Base C:Collector E:Emitter EBC Ordering Information Device BTPA94A3-X-TB-G BTPA94A3-X-BK-G Package TO-92 (Pb-free lead plating package) TO-92 (Pb-free lead plating package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTPA94A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 2/6 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD RθJA Tj Tstg Limits -400 -400 -6 -500 -300 625 200 150 -55~+150 Unit V V V mA mA mW C/W C C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob Min. -400 -400 -6 80 100 50 40 - Typ. -90 -120 - Max. -100 -100 -100 -200 -200 -500 -750 270 6 Unit Test Conditions V IC=-100μA V IC=-1mA V IE=-10μA nA VCB=-400V nA VEB=-6V nA VCE=-400V mV IC=-1mA, IB=-0.1mA mV IC=-20mA, IB=-2mA mV IC=-50mA, IB=-5mA mV IC=-10mA, IB=-1mA - VCE=-10V, IC=-1mA - VCE=-10V, IC=-10mA - VCE=-10V, IC=-50mA - VCE=-10V, IC=-100mA pF VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380μs, Duty Cycle2% Classification Of hFE2 Rank Range P 100~180 Q 120~270 BTPA94A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current 1000 10000 Saturation Voltage vs Collector Current Saturation Voltage-(mV) Current Gain---HFE VCE=10V 100 1000 VCESAT IC=30IB Saturation Voltage-(mV) 10 1 10000 VCE=5V 10 100 Collector Current ---IC(mA) 1000 Saturation Voltage vs Collector Current VBESAT@IC=10IB 1000 100 1 100 10 100 Collector Current--- IC(mA) 1000 Transition Frequency vs Collector Current Power Dissipation---PD(mW) 100 10 1 700 600 500 400 300 200 100 0 0 1000 IC=10IB IC=20IB 10 Collector Current ---IC(mA) Power Derating Curve 100 50 100 150 Ambient Temperature---TA(℃) Capacitance Characteristics 200 VCE=10V f=1MHz 100 Cib Capacitance-(pF) Transiition Frequency---fT(MHz) 10 Cob 10 1 BTPA94A3 10 Collector Current--- IC(mA) 100 1 0.1 1 10 Reverse-bised Voltage---(V) 100 CYStek Product Specification CYStech Electronics Corp. TO-92 Taping Outline Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 4/6 H2 H2 H2AH2A D2 A H3 L L1 F1F2 T2 P1 TP T1 H4 H H1 W1 W D1 D P2 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch BTPA94A3 Millimeters Min. Max. 4.33 4.83 3.80 4.20 0.36 0.53 4.33 4.83 2.40 2.90 - 0.3 15.50 16.50 8.50 9.50 -1 -1 - 27 - 21 - 11 2.50 - 12.50 12.90 5.95 6.75 50.30 51.30 - 0.55 - 1.42 0.36 0.68 17.50 19.00 5.00 7.00 253 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C236A3 Issued Date : 2003.06.30 Revised Date :2017.10.19 Page No. : 5/6 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak t.


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