N-Channel Silicon MOSFET
Ordering number : ENA1562
ECH8602M
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
ECH8602M
Features
• • • •
N-...
Description
Ordering number : ENA1562
ECH8602M
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
ECH8602M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±12 6 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A 0.5 5 Ratings min 30 1 ±10 1.3 typ max Unit V μA μA V S
Marking : TZ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned he...
Similar Datasheet