MEN9973J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 MEN9973J3 Features VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A Low Gate Charge Simple Drive Requirement BVDSS ID RDSON 60V 12A 100mΩ Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MEN9973J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2. Duty Cycle ≤ 1% MEN9973J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 60 ±20 12 8 30 *1 12 7.2 3.6 *2 20 0.22 -55~+175 V V A A A A mJ mJ W W/°C °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.DataSheet4U.com Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 2/7 Value 7.5 80 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol St...