MTB06N03J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 MTB06N03J3 Features BVDSS ID RDS(ON) 30V 80A 6mΩ 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol MTB06N03J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTB06N03J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 30 ±20 80 50 170 53 140 40 83 45 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.DataSheet4U.com Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page No. : 2/7 Value 1.8 75 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise sp...