MEN9971J3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C432J3 Issued Date : 2008.12.09 Revised Date : 2009.02.04 Page No. : 1/8 MEN9971J3 Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package BVDSS ID RDSON(MAX) 60V 25A 20mΩ Symbol MEN9971J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A,RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MEN9971J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 60 ±20 25 16 100 *1 20 20 10 50 0.31 -55~+175 V A mJ W W/°C °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.DataSheet4U.com Spec. No. : C432J3 Issued Date : 2008.12.09 Revised Date : 2009.02.04 Page No. : 2/8 Value 3 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. 1.8 25 16 19 43 7.2 11 20 12 50 25 3330 256 207...