P-Channel Logic Level Enhancement Mode Power MOSFET
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C734J3 Is...
Description
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 1/7
MTB12P04J3
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package
BVDSS ID RDSON(MAX)
-40V -25A 12.6mΩ
Equivalent Circuit
MTB12P04J3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTB12P04J3
VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg
-40 ±20 -25 -18 -100 -25 31.25 15 50 17 -55~+175
V
A
mJ W °C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
www.DataSheet4U.com Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 2/7
Value 2.5 75
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON)
*1 *1
Min. -40 -1.0 -25 -
...
Similar Datasheet