ELC-490-37

LED - Chip Preliminary Radiation Green Type Standard 10.04.2007 Technology InGaN/Al2O3 ELС-490-37 rev. 01/07 www.DataSheet4U.com Electrodes Both on top side 380 µm typ. dimensions in µm (±20 µm) Ø 90µm 100 µm P typ. thickness 90 (±20) µm front side metalization Au-alloy, 0.5 µm backside metalization Al-alloy, 1.5 µm 350 µm 380 µm N 350 µm Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Forward current (DC) Peak forward current Operating temperature range Storage temperature range (tP ≤ 50 µs, tP /T = 1/2) Test conditions Symbol IF IFM Tamb Tstg Value 20 100 -40 to +85 -40 to +100 Unit mA mA °C °C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Luminous intensity1 Dominant wavelength Spectral bandwidth at 50% Switching time 1 Ø100 Symbol VF VR Ιv λD ∆λ0.5 tr , t f Min Typ 3.3 Max 3.5 Unit V V IF = 20 mA IF = 1 µA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 220 480 280 490 25 20 500 mcd nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELС-490-37 Lot N° Ιv(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 ...