CLT435
NPN Silicon Phototransistor
0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47)
®
www.DataShee...
CLT435
NPN Silicon Photo
transistor
0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47)
®
www.DataSheet4U.com
Clairex
0.215 (5.46) 0.205 (5.21)
Technologies, Inc.
March, 2001
COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17
features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +150°C ±9° acceptance angle operating temperature .................................................................... -65°C to +125°C custom aspheric lensed TO-18 lead soldering temperature(1) .......................................................................... 260°C package collector-emitter voltage...................................................................................... 30V
transistor base is not bonded 50mA tested and characterized at 660nm continuous collector current ............................................................................. continuous power dissipation(2) ..................................................................... 250mW RoHS compliant description The CLT435 is a silicon
NPN photo
transistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupl...