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CLT435

Clairex Technologies

NPN Silicon Phototransistor

CLT435 NPN Silicon Phototransistor 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) ® www.DataShee...


Clairex Technologies

CLT435

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Description
CLT435 NPN Silicon Phototransistor 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) ® www.DataSheet4U.com Clairex 0.215 (5.46) 0.205 (5.21)  Technologies, Inc. March, 2001 COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +150°C ±9° acceptance angle operating temperature .................................................................... -65°C to +125°C custom aspheric lensed TO-18 lead soldering temperature(1) .......................................................................... 260°C package collector-emitter voltage...................................................................................... 30V transistor base is not bonded 50mA tested and characterized at 660nm continuous collector current ............................................................................. continuous power dissipation(2) ..................................................................... 250mW RoHS compliant description The CLT435 is a silicon NPN phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupl...




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