FDMS7600AS

FDMS7600AS Dual N-Channel PowerTrench® MOSFET FDMS7600AS Dual N-Channel PowerTrench® MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ May 2014 Features General Description Q1: N-Channel „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 Top Bottom Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics S2 5 S2 6 S2 7 G2 8 (Note 3) TC = 25 °C TA = 25 °C TA = 25 °C TA = 25 °C Q2 4 D1 3 D1 2 D1 Q1 1 G1 Q1 Q2 30 30 ±20 ±20 30 121a 40 221b 40 2.21a 1.01c 60 2.51b 1.01d -55 to +150 Units V V A W °C RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to A...