ACE2301

www.DataSheet4U.com ACE2301 Technology Description P-Channel Enhancement Mode MOSFET The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features VDS=-20V RDS(ON),[email protected],[email protected]=100mΩ RDS(ON),[email protected],[email protected]=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD TJ TSTG RθJA Max Unit -20 V ±12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/W Operating Junction Temperature Storage Temperature Range Junction to Ambient Thermal Resistance (PCB mounted)2) 2 2.1-in 2oz Cu PCB board. Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 3.Guaranteed by design; not subject to production testing. VER 1.2 1 www.DataSheet4U.com ACE2301 Technology Packaging Type SOT-23-3 3 P-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering inf...