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ACE2304
Technology
Description
N-Channel Enhancement Mode MOSFET
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • •
30V/3.2A, RDS(ON)=65mΩ@VGS=10V 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 3.2 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 1.25 Power Dissipation W PD TA=70℃ 0.8 O Operating Junction Temperature TJ 150 C Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.2
1
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ACE2304
Technology
Packaging Type
SOT-23-3
3
N-Channel Enhancement Mode MOSFET
Pin Symbol Description 1 G Gate 2 S Source 3 D Drain
1 2
Ordering information
Selection Guide ACE2304 XX + Pb - free BM : SOT-23-3
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
Symbol
Conditions Static
Min.
Typ.
Max.
Unit
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD
VGS=0V, ID=250 uA VD=VGS, ID=250uA VDS=0V,VGS=±20V VDS=30V, VGS=1.0V VDS=30V, VGS=0V TJ=55℃ VDS≧4.5V, VGS=10V VDS≧4.5V, VGS=4.5V VGS=10V, ID=3.2A VGS=4.5V, ID=2.0A VDS=4.5V,ID=2.5A IS=1.25A, VGS=0V
30 1.0 3.0 ±100 1 10 6 4 0.050 0.065 4.6 0.82 1.2 VER 1.2 0.065 0.090
V nA uA A Ω S V 2
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ACE2304
Technology
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
N-Channel Enhancement Mode MOSFET
Dynamic 4.5 VDS=15V, VGS=10V, ID=2.5 0.8 1.0 240 VDS=15V, VGS=0V, f=1MHz 110 17 8 VDD=15RL=15, ID=1.0A, VGEN=10, RG=6Ω 12 17 8 20 30 35 20 nS pF 10 nC
Typical Performance Characteristics
Output Characteristics Transfer Characteristics
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
ID-Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VER 1.2
3
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ACE2304
Technology
Gate .