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CY7C1465AV25

Cypress Semiconductor

Flow-Through SRAM

CY7C1461AV25 CY7C1463AV25 www.DataSheet4U.com CY7C1465AV25 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM with N...


Cypress Semiconductor

CY7C1465AV25

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Description
CY7C1461AV25 CY7C1463AV25 www.DataSheet4U.com CY7C1465AV25 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM with NoBL™ Architecture Features No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock Pin-compatible and functionally equivalent to ZBT™ devices Internally self-timed output buffer control to eliminate the need to use OE Registered inputs for flow-through operation Byte Write capability 2.5V/1.8V I/O power supply Fast clock-to-output times — 6.5 ns (for 133-MHz device) Clock Enable (CEN) pin to enable clock and suspend operation Synchronous self-timed writes Asynchronous Output Enable CY7C1461AV25, CY7C1463AV25 available in JEDEC-standard lead-free 100-pin TQFP package, lead-free and non-lead-free 165-ball FBGA package. CY7C1465AV25 available in lead-free and non-lead-free 209-ball FBGA package. Three chip enables for simple depth expansion Automatic Power-down feature available using ZZ mode or CE deselect IEEE 1149.1 JTAG-Compatible Boundary Scan Burst Capability—linear or interleaved burst order Low standby power Functional Description[1] The CY7C1461AV25/CY7C1463AV25/CY7C1465AV25 are 2.5V, 1M × 36/2M × 18/512K × 72 Synchronous Flow-through Burst SRAMs designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1461AV25/CY7C...




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