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TLP2095 Dataheets PDF



Part Number TLP2095
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocoupler
Datasheet TLP2095 DatasheetTLP2095 Datasheet (PDF)

TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP2095 TLP2095 Programmable controllers Microprocessor system interfaces Unit: mm The Toshiba TLP2095 consists of two infrared emitting diodes optically coupled to a high-gain, high-speed photodetector. The TLP2095 is housed in a 6-pin MFSOP. With a totem-pole output, the TLP2095 is capable of both sinking and sourcing current. The TLP2095 has an internal Faraday shield, which provides a guaranteed common-mode transient immunity of ±10 kV/μs. The TLP2095.

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TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP2095 TLP2095 Programmable controllers Microprocessor system interfaces Unit: mm The Toshiba TLP2095 consists of two infrared emitting diodes optically coupled to a high-gain, high-speed photodetector. The TLP2095 is housed in a 6-pin MFSOP. With a totem-pole output, the TLP2095 is capable of both sinking and sourcing current. The TLP2095 has an internal Faraday shield, which provides a guaranteed common-mode transient immunity of ±10 kV/μs. The TLP2095 has a noninverting output. An inverting-output version, the TLP2098, is also available.  Buffer logic type (totem-pole output)  Guaranteed Performance Over Temperature: -40 to 100°C  Power Supply Voltage: 3.0 to 20 V  Input Threshold Current: IFLH =±3 mA (max)  Switching Time (tpLH/tpHL): 250 ns (max)  Common mode transient immunity: ±15 kV/µs  Isolation Voltage: 3750 Vrms  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-approved : EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Truth Table Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L JEDEC JEITA TOSHIBA ― ― 11-4C2 Weight: 0.09 g (typ.) Pin Configuration (top view) 1 : Anode 1 VCC 6 Cathode 3 : Cathode 5 Anode 4 : GND GND 5 : Output 3 SHIELD 4 6 : VCC Schematic IF1 1+ VF 3- IF2 ICC VCC 6 0.1 µF bypass capacitor must be Tr1 connected between pin 6 and 4 IO VO Tr2 5 SHIELD GND 4 Start of commercial production 2009-05 © 2019 1 Toshiba Electronic Devices & Storage Corporation 2019-06-03 Recommended Operating Conditions TLP2095 CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current, ON IF(ON) 5 ― 15 mA Input Voltage, OFF VF(OFF) 0 ― 0.8 V Supply Voltage* VCC 3.0 ― 20 V Operating Temperature Topr -40 ― 100 °C * This item denotes operating range, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current Forward Current Derating (Ta ≥ 83 °C) Peak Transient Forward Current (Note 1) Input Power Dissipation IF ∆IF/ΔTa IFPT PD ±20 -0.48 ±1 40 mA mA/˚C A mW LED Input power dissipation derating (Ta ≥ 83 °C) ΔPD/ΔTa -0.96 mW/°C Output Current 1 (Ta ≤ 25 °C) DETECTOR Output Current 2 (Ta ≤ 100 °C) Output Voltage Supply Voltage Output Power Dissipation Output Power Dissipation Derating (Ta ≥ 25°C) Operating Temperature Range Storage Temperature Range Lead Solder Temperature (10 s) Isolation Voltage (AC, 60 s, R.H.≤ 60 %) (Note 2) IO1 IO2 VO VCC PO ΔPO /ΔTa Topr Tstg Tsol BVs 25/-15 5/-5 -0.5 to 20 -0.5 to 20 75 -0.75 -40 to 100 -55 to 125 260 3750 mA mA V V mW mW/°C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Pulse width ≤ 1 µs, 300 pps. Note 2: Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. © 2019 2 Toshiba Electronic Devices & Storage Corporation 2019-06-03 Electrical Characteristics (Unless otherwise specified, Ta = -40 to 100°C, VCC = 3.0 to 20 V) CHARACTERISTIC TEST SYMBOL CIRCUIT CONDITION MIN TYP. Input Forward Voltage VF ― IF = 10 mA , Ta = 25 °C 1.45 1.57 Temperature Coefficient of Forward Voltage ΔVF/ΔTa ― IF = 10 mA ― -2.0 Input Capacitance CT ― V = 0 V, f = 1 MHz , Ta = 25 °C ― 190 Logic Low Output Voltage VOL 1 IOL = 0.02 mA, VF = 0.8 V ― 0.2 Logic High Output Voltage Logic Low Supply Current VOH ICCL 2 IOH = -0.02 mA VCC = 3.0 V 2.0 2.5 IF = 5 mA VCC = 20 V 17.4 19.5 3 VF = 0 V ― ― Logic High Supply Current ICCH 4 IF = 5 mA ― ― Logic Low Short Circuit VCC = VO = 4.5 V 15 80 Output Current (Note 3) IOSL 5 VF = 0 V VCC = VO = 20 V 20 90 Logic High Short Circuit Output Current (Note 3) IOSH 6 IF = 5 mA VCC = 4.5 V VO = GND VCC = 20 V -5 -12 -10 -20 Input Current Logic High Output IFLH ― IO = -0.02 mA, VO> 2.4 V ― 1.0 Input Voltage Logic Low Output VFHL ― IO =.


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