TPC6108

TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) www.DataSheet4U.com TPC6108 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) TENTATIVE Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Drain power dissipation(t = 5 s) Drain power dissipation(t = 5 s) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 4) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −4.5 −18 2.2 0.7 1.3 −2.25 0.22 150 −55~150 mJ A mJ Unit V V V A Drain Drain Gate Source Drain Drain JEDEC W JEITA TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration °C °C 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient(t = 5 s) (Note 2a) Thermal resistance, channel to ambient(t = 5 s) (Note 2b) Symbol Max Unit 1 Rth (ch-a) 56.8 °C/W 2 3 Rth (ch-a) 178.5 °C/W Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transis...