TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8120
Lithium Ion Battery Applications P...
TPC8120
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8120
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a)
Drain power dissipation (t = 10 s) (Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
PD
EAS IAR EAR Tch Tstg
−30
V
−30
V
−25/+20
V
−18 A
−72
1.9
W
1.0
W
211
mJ
−18
A
0.03
mJ
150
°C
−55 to 150
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar...