MRF8S7170NR3

Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 0, 2/2010 www.DataSheet4U.com RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.7 19.5 19.4 hD (%) 37.1 37.0 37.9 Output PAR (dB) 6.2 6.1 6.1 ACPR (dBc) -38.7 -37.5 -37.8 MRF8S7170NR3 728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ] 182 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ra...