STI11NM60ND

STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package Features TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness te P Applications le Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge ctopologies and ZVS phase-shift converters. bsolete Produ Product status link O STI11NM60ND Product summary Order code STI11NM60ND Marking 11NM60ND Package I²PAK Packing Tube DS14349 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STI11NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage 600 VGS Gate-source voltage ±25 Drain current (continuous) at TC = 25 °C 10 ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) t(s) PTOT Total power dissipation at TC = 25 °C c dv/dt(2) Peak diode recovery voltage slope du Tstg Storage temperature range ro TJ Maximum operating juncti...