STD11NM60ND

STD11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD11NM60ND 650 V 450 mΩ 10 A Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness Applications G(1) Switching applications S(3) Description AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STD11NM60ND Product summary Order code STD11NM60ND Marking 11NM60ND Package DPAK Packing Tape and reel DS5797 - Rev 3 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD11NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Maximum operating junction temperature 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/dt ...