NDD05N50Z

NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features www.DataSheet4U.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 5.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 5 (Note 1) 3.2 (Note 1) 20 (Note 1) 28 NDF NDP 500 5 3.2 20 96 ±30 130 3000 4.7 3 19 83 NDD Unit V A A G (1) A W V mJ V V 4 4 1 2 1 1 3 2 2 3 3 3 DPAK TO−220FP TO−220AB IPAK CASE 221D CASE 221A CASE 369D CASE 369AA STYLE 2 STYLE 1 STYLE 5 STYLE 2 1 2 N−Channel D (2) S (3) dv/dt IS TL TPKG 4.5 (Note 2) 5 300 260 V/ns A °C TJ, Tstg − 55 to 150 °C MARKING AND ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings...