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STD18NF03L

STMicroelectronics

Power MOSFET

STD18NF03L Datasheet Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package TAB 2...


STMicroelectronics

STD18NF03L

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STD18NF03L Datasheet Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code STD18NF03L VDS 30 V RDS(on) max. < 50 mΩ ID 17 A AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications G(1) Switching applications S(3) Description AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD18NF03L Product summary Order code STD18NF03L Marking 18NF03L Package DPAK Packing Tape and reel DS5403 - Rev 2 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0 V) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating Factor dv/dt(2). Peak diode recovery avalanche energy EAS(3) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature rang...




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