Power MOSFET
STD18NF03L
Datasheet
Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package
TAB
2...
Description
STD18NF03L
Datasheet
Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package
TAB
23 1 DPAK
D(2, TAB)
Features
Order code STD18NF03L
VDS 30 V
RDS(on) max. < 50 mΩ
ID 17 A
AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge
Applications
G(1)
Switching applications
S(3)
Description
AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique
STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
Product status link STD18NF03L
Product summary
Order code
STD18NF03L
Marking
18NF03L
Package
DPAK
Packing
Tape and reel
DS5403 - Rev 2 - April 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0 V)
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Derating Factor
dv/dt(2). Peak diode recovery avalanche energy
EAS(3)
Single pulse avalanche energy
Tstg
Storage temperature range
TJ
Operating junction temperature rang...
Similar Datasheet