STB432S

www.DataSheet4U.com STB/P432S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 40 ±20 TC=25°C 60 240 130 TC=25°C 62.5 -55 to 150 Units V V A A mJ W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 50 °C/W °C/W Details are subject to change without notice. Jun,24,2008 1 www.samhop.com.tw www.DataSheet4U.com STB/P432S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= ±20V , VDS=0V 1 ±100 1 1.7 7 9 26 1600 280 150 20 21 45 16 32 1...