Document
Ordering number : ENA1603
ATP107
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SANYO Semiconductors
DATA SHEET
ATP107
Features
• • • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --50 --150 50 150 --55 to +150 80 --25 Unit V V A A W °C °C mJ A
Note : *1 VDD=--10V, L=200μH, IAV=--25A *2 L≤200μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions -1mA, VGS=0V ID=-40V, VGS=0V VDS=VGS=±16V, VDS=0V Ratings min --40 -1 ±10 typ max Unit V μA μA
Marking : ATP107
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
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N1109PA TK IM TC-00002146 No. A1603-1/4
ATP107
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Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions -10V, ID=-1mA VDS=-10V, ID=--25A VDS=-25A, VGS=-10V ID=-13A, VGS=-4.5V ID=VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--50A VDS=--20V, VGS=--10V, ID=--50A VDS=--20V, VGS=--10V, ID=--50A IS=--50A, VGS=0V min --1.5 40 13 18.5 2400 330 240 17 260 190 160 47 11.5 8 --1.02 --1.5 17 26
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Ratings typ max --2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7057-001
6.5 0.5
1.5 0.4
4.6 2.6 0.4
4
7.3
1.7
2 0.5 1 0.8 2.3 2.3 3
9.5
0.55 0.7
0.6
4.6
0.4
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK
Switching Time Test Circuit
VIN VDD= --20V
0V --10V
0.1
VIN PW=10μs D.C.≤1% G D
ID= --25A RL=0.8Ω VOUT
P.G
ATP107 50Ω S
6.05
No. A1603-2/4
ATP107
--50 --45 --40
ID -- VDS
--1 0.0 V
--80
ID -- www.DataSheet4U.com VGS
Tc= --25 °C
Tc= 7 5°C
25°
--2 --3
--8
. --6
--70 --60 --50 --40 --30 --20 --10 0
.0 V
Drain Current, ID -- A
--1 6
--35 --30 --25 --20 --15 --10 --5 0 0 --0.1 --0.2 --0.3
--4.0V
VGS= --3.5V
Drain Current, ID -- A
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--1
--25
°C
C
--4
--5
25° C
--6 IT15169
5V --4.
Drain-to-Source Voltage, VDS -- V
40
RDS(on) -- VGS
IT15168 40
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
35 30 25 20 15 10 5 0
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Tc=25°C Single pulse
ID= --13A --25A
Single pulse
35 30 25 20 15 10 5 0 --60
= -VGS
= -, ID 4.5V
13A
= --2 0V, I D 1 = VGS
5A
--2
--4
.