DatasheetsPDF.com

ATP107 Dataheets PDF



Part Number ATP107
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Datasheet ATP107 DatasheetATP107 Datasheet (PDF)

Ordering number : ENA1603 ATP107 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP107 Features • • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanc.

  ATP107   ATP107


Document
Ordering number : ENA1603 ATP107 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP107 Features • • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --50 --150 50 150 --55 to +150 80 --25 Unit V V A A W °C °C mJ A Note : *1 VDD=--10V, L=200μH, IAV=--25A *2 L≤200μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions -1mA, VGS=0V ID=-40V, VGS=0V VDS=VGS=±16V, VDS=0V Ratings min --40 -1 ±10 typ max Unit V μA μA Marking : ATP107 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1109PA TK IM TC-00002146 No. A1603-1/4 ATP107 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions -10V, ID=-1mA VDS=-10V, ID=--25A VDS=-25A, VGS=-10V ID=-13A, VGS=-4.5V ID=VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--50A VDS=--20V, VGS=--10V, ID=--50A VDS=--20V, VGS=--10V, ID=--50A IS=--50A, VGS=0V min --1.5 40 13 18.5 2400 330 240 17 260 190 160 47 11.5 8 --1.02 --1.5 17 26 www.DataSheet4U.com Ratings typ max --2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 4.6 2.6 0.4 4 7.3 1.7 2 0.5 1 0.8 2.3 2.3 3 9.5 0.55 0.7 0.6 4.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Switching Time Test Circuit VIN VDD= --20V 0V --10V 0.1 VIN PW=10μs D.C.≤1% G D ID= --25A RL=0.8Ω VOUT P.G ATP107 50Ω S 6.05 No. A1603-2/4 ATP107 --50 --45 --40 ID -- VDS --1 0.0 V --80 ID -- www.DataSheet4U.com VGS Tc= --25 °C Tc= 7 5°C 25° --2 --3 --8 . --6 --70 --60 --50 --40 --30 --20 --10 0 .0 V Drain Current, ID -- A --1 6 --35 --30 --25 --20 --15 --10 --5 0 0 --0.1 --0.2 --0.3 --4.0V VGS= --3.5V Drain Current, ID -- A --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1 --25 °C C --4 --5 25° C --6 IT15169 5V --4. Drain-to-Source Voltage, VDS -- V 40 RDS(on) -- VGS IT15168 40 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 25 20 15 10 5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C Single pulse ID= --13A --25A Single pulse 35 30 25 20 15 10 5 0 --60 = -VGS = -, ID 4.5V 13A = --2 0V, I D 1 = VGS 5A --2 --4 .


ATP106 ATP107 ATP108


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)