P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA1604
ATP108
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
ATP108
Features
• • • • •
P-Ch...
Description
Ordering number : ENA1604
ATP108
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
ATP108
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --70 --210 60 150 --55 to +150 95 --35 Unit V V A A W °C °C mJ A
Note : *1 VDD=--15V, L=100μH, IAV=--35A *2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions -1mA, VGS=0V ID=-40V, VGS=0V VDS=VGS=±16V, VDS=0V Ratings min --40 -1 ±10 typ max Unit V μA μA
Marking : ATP108
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose pu...
Similar Datasheet