SDI100S12

SDI100S12 SPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 145(105) 290(210) _ +20 _ 40...+150(125) 4000 95(65) 290(210) 720 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SDI100S12 SPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC = 3mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 20V, Tj = 25(125)oC IC = 50A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.com TC = 25oC, unless otherwise specified min. 4.8 typ. max. Units V mA V m V nF 25 nH m ns ns ns ns mJ 2.5 1.3 16 V V m A uC mJ K/W K/W K/W Nm Nm g 5.5 6.45 0.1 0.3 1(0.9) 1.15(1.05) 13(16) 16(20) 1.9(2.1) 2.35(2.55) 6.2 0.74 0.71 0.75(1) 150 45 560 50 8.5(7.5) 2(1.8) 1.05 13 105 10.5 3.4 0.21 0.5 0.05 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 75A; Tj = 125oC Qrr di/dt = 3100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M5 w res., terminal-chip TC = 25...