NPT IGBT Modules
SDI150N12
NPT IGBT Modules
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Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings Symbol IGBT ...
Description
SDI150N12
NPT IGBT Modules
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Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions
TC = 25oC, unless otherwise specified
Values 1200
Units V A A V
o
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION <
o
150(110) 300(220) _ +20
_ 40...+150(125)
2500 150(100) 300(220) 1100 200(135) 300(220) 1450
C
AC, 1min Visol Inverse Diode IF = -IC IFRM
V A A A A A A
TC= 25(80)oC TC= 25(80)oC, tP =1ms
IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC
SDI150N12
NPT IGBT Modules
Characteristics
Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC =4mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =100A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz
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TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 0.1 1.4(1.6) 11(15) 2.5(3.1) 6.5 1 0.5 0.35(0.5) 160 80 400 70 13(11) 2(1.8) 8 35(50) 5(14) 320 160 520 100 max. 6.5 0.3 1.6(1.8) 14(19) 3(3.7) 8.5 1.5 0.6 20 Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g
td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 100A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V FWD under following conditions: VF = VEC I...
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