SDI200N12

SDI200N12 NPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 200(180) 400(360) _ +20 _ 40...+150(125) 2500 200(130) 400(360) 1450 260(180) 400(360) 1800 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC SDI200N12 NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC =6mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.com TC = 25oC, unless otherwise specified min. 4.5 typ. max. Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 100A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 150A; Tj = 25oC Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per ...