MRFG35002N6AT1

Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 26.5% ACPR @ 5 MHz Offset — - 42 dBc in 3.84 MHz Channel Bandwidth 1.5 Watts P1dB @ 3550 MHz, CW Features Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 8 -5 22 - 65 to +150 175 Unit Vdc Vdc dBm °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (2) 13.7 Unit °C/W 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to h...