2SC5838

Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www.DataSheet4U.com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 2 80 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking symbol: 1F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Forward transfer gain Noise figure Maximum unilateral power gain Collector output capacitance (Common base, input open circuited) Transition frequency Symbol VCBO VCEO ICBO IEBO hFE S21e2 NF GUM Cob fT Conditions IC = 10 µA, IE = 0 IC = 100 µA, IB = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 800 MHz VCE = 8 V, IC = 20 mA, f = 800 MHz VCE = 8 V, IC = 20 mA, f = 800 MHz VCB =...