2SC5839

Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification ■ Features High transition frequency fT Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) www.DataSheet4U.com Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 2 30 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 1N ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO IEBO hFE fT S21e2 NF Cob Conditions VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA, f = 1.5 GHz VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz VCB = 3 V, IE = 0, f = 1 MHz 40 100 10 6.5 1.7 0.4 0.7 Min Typ Max 1 1 160 Unit µA µA  GHz dB dB pF Note) Measuring methods ...