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2SK2329(L), 2SK2329(S)
Silicon N Channel MOS FET
REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 ...
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2SK2329(L), 2SK2329(S)
Silicon N Channel MOS FET
REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching
regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2329(L), 2SK2329(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 30 ±10 10 40 10 20 150 –55 to +150
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(Ta = 25°C)
Unit V V A A A W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recover...