55GN01FA

Ordering number : ENA1113 55GN01FA www.DataSheet4U.com SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA Features UHF Wide-band Low-noise Amplifier Applications High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 250 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT1 fT2 VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=3V, IC=5mA VCE=5V, IC=20mA 100 3.0 4.5 5.5 Conditions Ratings min typ max 0.1 1 160 GHz GHz Unit μA μA Marking : ZD Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sust...