55GN01SA

Ordering number : ENA1115 55GN01SA www.DataSheet4U.com SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA Features UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 ⏐S21e⏐ NF Conditions VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=3V, IC=5mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=3V, IC=5mA, f=1GHz, ZS=ZL=50Ω Ratings min typ max 0.1 1 100 3.0 4.5 5.5 1.0 0.6 7 10 1.9 1.2 180 Unit μA μA GHz GHz pF pF dB dB Marking : ZD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial...