Document
Ordering number : ENN7721A
CPH3236
www.DataSheet4U.com
CPH3236
Applications
•
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
• • • • • • •
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products(mounting height : 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board(600mm2!0.8mm) Conditions Ratings 100 100 50 6 3 6 600 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=500mA Ratings min typ max 0.1 0.1 250 380 400 MHz Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM / D0503 TS IM TA-100857 No.7721-1/4
CPH3236
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. 100 100 50 6 35 300 22 min
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Ratings typ 13 60 105 0.88 100 160 1.2 max Unit pF mV mV V V V V V ns ns ns
Marking : DG
Package Dimensions
unit : mm 2150A
2.9 0.4 0.6 0.15
Switching Time Test Circuit
IB1 OUTPUT IB2 VR 50Ω + 100µF + 470µF VCC=25V RB
PW=20µs D.C.≤1%
0.2
3
INPUT
RL
0.05 1.6 2.8
1
1.9
2
0.6
0.7 0.9
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V IC=10IB1= --10IB2=1A
0.2
3.0
IC -- VCE
mA 60
40m A
3
IC -- VBE
VCE=2V
2.5
Collector Current, IC -- A
20mA
2.0
Collector Current, IC -- A
15mA
8mA 10mA
6mA 4mA
2
1.5
1.0
1
2mA
0.5
0 0
IB=0
0.2 0.4 0.6 0.8 1.0 IT06999
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
Ta=75 °C
25°C --25°C
IT07000
No.7721-2/4
CPH3236
7
hFE -- IC
VCE=2V
3 2
www.DataSheet4U.com VCE(sat) -- IC
IC / IB=20
5
DC Current Gain, hFE
3
Ta=75°C 25°C
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
0.1 7 5
--25°C
2
3 2
=7 Ta
C 5°
C 5° --2
25
°C
100
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Collector Current, IC -- A
5 3 2
IT07001 3
VCE(sat) -- IC
Collector Current, IC -- A
IT07002
VBE(sat) -- IC
IC / IB=50
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
0.1 7 5 3 2
1.0 7
= Ta
7
C 5°
Ta= --25°C
75°C
°C --25
25
°C
5
25°C
3 2 0.01
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
2
3
5
7 0.1
2
3
5 7 1.0
2
3
5 7 IT07004
Collector Current, IC -- A
7 5
IT07003 7
fT -- IC
Collector Current, IC -- A
Cob -- VCB
VCE=10V
f=1MHz
Gain-Bandwidth Product, fT -- MHz
3 2
Output Capacitance, Cob -- pF
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7
5
100 7 5 3 2
3
2
10 0.01
10 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC -- A
10 7 5
IT07005
ASO
Collector-to-Base Voltage, VCB -- V
1.0 0.9
5 7 100 IT07006
PC -- Ta
ICP=6A IC=3A
10µs
Collector Dissipation, PC -- W
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
1m
s
50
10 s 0µ
0µ s
M
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
ou
10
DC
10
nt
m
ed
s
on
.