FW503

Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET www.DataSheet4U.com SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Features Package Dimensions 4.4 6.0 Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high8 density mounting. The FW503 incorporates two chips being equivalent to the MCH3306 and the SBS004 in one package. [FW503] 5 0.3 5.0 1.5 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (2000mm2!0.8mm) ≤10S -20 ±10 --3 -12 2 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : W503 Any and all SANYO products described or contained herein do not have specifications that can handle applicati...