MCH5810

Ordering number : ENN8194 MCH5810 www.DataSheet4U.com MCH5810 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] Short reverse recovery time. Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage(*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 150 3 --55 to +125 --55 to +125 V V mA A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit --30 --9 --0.4 --1.6 0.6 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QK (*1) : When designing a circuit using this product, that this P-channel MOSFET has a gate (oxide film) protection diode connected only between its gate and source. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such...